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Samsung - Memory - 512 MB - RIMM 184-PIN - RDRAM - 800 MHz / PC800 - 2.5 V at Backoffice

Samsung - Memory - 512 MB - RIMM 184-PIN - RDRAM - 800 MHz / PC800 - 2.5 V
MR16R162GDF0-CM8


This product is no longer available.
The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb Direct RDRAM devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. RDRAM devices are capable of sustained data transfers up to at 0.94 ns per two bytes 7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports up to four simultaneous transactions per device.

Product DescriptionSamsung memory - 512 MB - RIMM 184-PIN - RDRAM
Storage Capacity512 MB
Upgrade TypeGeneric
TechnologyRDRAM (RAMBUS)
Form FactorRIMM 184-PIN
Memory Speed800 MHz ( PC800 )
Supply Voltage2.5 V
Lead PlatingGold

GENERAL

Storage Capacity512 MB
Upgrade TypeGeneric

MEMORY

TypeDRAM
TechnologyRDRAM (RAMBUS)
Form FactorRIMM 184-PIN
Memory Speed800 MHz ( PC800 )
Access Time40 ns
Module Configuration256 x 16
Supply Voltage2.5 V
Lead PlatingGold

EXPANSION / CONNECTIVITY

Compatible Slots1 x memory - RIMM 184-PIN